Free-electron laser emission architecture impact on EUV lithography
spiedigitallibrary.org
Free-electron laser emission architecture impact on EUV lithography
Laser-produced plasma (LPP) EUV sources have demonstrated approximately 125 W at customer sites, establishing confidence in EUV lithography as a viable manufacturing technology. However, beyond the 7 nm technology node existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half ...
Mar 31, 2017
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