CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
Having moved the silicon-germanium (SiGe) process out of the labs and onto the manufacturing floor a few years ago, researchers at IBM Microelectronics have reformed the structure of the SiGe ...
To achieve this breakthrough, NTT applied its InP-based heterojunction bipolar transistor (InP HBT) technology1to improve the performance of amplifier ICs and package mounting technology to ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results