For satellite and cellular base stations, a GaN (gallium-nitride) power FET from Toshiba Corp surpasses the output of GaAs (gallium-arsenide) devices, improving power density by a factor of eight.
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today introduced its ...
This article is the first in a series of articles written for the power systems design engineer and engineering manager. Throughout the next several months we will look at gallium nitride technology ...
Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems. High-voltage 650V GaN FETs Credit: Renesas These GaN FETs are suitable for ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today announced its first ...
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. Transphorm, the GaN ...
With the significant reduction in package parasitics provided by the eGaN FET, the package inductance is minimized and is no longer the major parasitic loss contributor. The high frequency loop ...
Fig. 1. Mounting side of eGaN FETs showing (a) Gen 4, and (b) Gen 2 This gap in the middle of the die enables large copper traces along with cooling vias that enhance thermal performance in the ...
Nexperia’s GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable ...
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