GOLETA, Calif.--(BUSINESS WIRE)-- Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
DALLAS, Nov. 9, 2020 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) ...
Wide-bandgap semiconductors are an attractive material for power devices due to low losses, improved temperature capability, and high thermal conductivity. Compared to silicon (Si), with a larger ...
The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...
EL SEGUNDO, CALIFORNIA, UNITED STATES, February 27, 2024 /EINPresswire.com/ -- EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm x 5 mm QFN package ...
Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...
Gallium nitride field-effect transistors (GaN FETs) use electric fields to modulate the current flowing through semiconductor channels. Electronics engineers frequently integrate 650-V components into ...
The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...
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